Ateliers et séminaires 2009

Titre de l’animation

type

date

durée

Coordinateur(s) technique(s)

Optical Localization Techniques Workshop

A

26-27 Janvier

2 jours

Philippe Perdu (CNES)

Electron-Surface Scattering, Electron-Grain Boundary Scattering And Charge Transport In Thin Metallic Films S 25 Février 0,5 jour Philippe Perdu (CNES) et CCT MAT
Comprendre les évolutions des technologies Silicium
Journée du CCT MCE et AG
S 2 mars 1 jour Christian Moreau (CELAR) et Sebastien Salas (Captronic)
International Symposium On Reliability Of Optoelectronics For Space (ISROS) A 11-15 mai 5 jours Olivier Gilard (CNES)
Comprendre les évolutions des technologies Silicium (Paris) A 11 Juin 1 jour dominique talbourdet (EDF)
Caractérisation Micromécanique de matériaux en couche mince destinés aux micro- et nano- technologies S 17 Septembre 0,5 jour Cedric Seguinau (NovaMEMS)
Round table “Network on Chip” A 17-18 Septembre 2 jours Laurent Hili (ESA)
Atelier PMES “Power Micro-devices Embedded for Mobile Solutions, from energy harvesting to power management & supply” A 1 Octobre 1 jour

Clovis Lataste (NovaMEMS)

Carole Rossi (LAAS)

Workshop on Long Term Reliability A 9 Octobre 0,5 jour

Philippe perdu (CNES)

Laurent Cretinon (EDF)

stockage & retour d’expérience A 21 Octobre 1 jour Dominique Talbourdet (EDF)
IPDiA : solution d'intégration 3D S 3 Décembre 0,5 jour Philippe Perdu (CNES)
Obsolescence, comment l’éviter ou la gérer? S 3 Décembre 1 jour Myriam Cournet (CNES)
CMOS detectors for high performance applications A 8-9 Décembre 2 jours Alex Materne (CNES)

Voici une brève synthèse des animations 2009 :

 

Optical Localization Techniques Workshop

 

The aim of this workshop is to cluster tool manufacturers and users in a unique opportunity to exchange information on optical techniques like emission microscopy (static, TRE, TRI, …), laser stimulation (thermal and photoelectric, static and dynamic) and laser voltage probing. It should allow deep technical exchanges on best practices on existing tools, new techniques to extend applications in order to increase return on investment, and new developments including tool manufacturer roadmaps to prepare the future.
It will be a workshop, not a conference, and a friendly event focused on practical issues. It will also give users a chance to meet main tool manufacturers and to foster their requirements for new tools and techniques.

les présentations (accès privatif):

Introduction

Static Emission microscopy background
InGaAs versus CCD
SIL for improved sensitivity and spatial resolution
Selecting Centric vs. Aplanatic RSIL
Influence of Temperature Variation on Electrical and Photon Emission AlGaN/GaN High Mobility Electron Transistors Characterization

  • Optical probing techniques: Laser Voltage Probing, Time Resolved Emission & Time Resolved Imaging

Introduction

Dynamic Emission microscopy background
Functional analysis with dynamic emission microscopy
Laser Timing Probe with Frequency Mapping
LVP Signal – Where to Probe? Modulation Mapping or LVI
Facing the poor optical resolution and the sensor sensitivity limitation challenges for TRE probing
Design visibility enhancement for failure analysis

  • Static laser Stimulation

Introduction

Nanoscale resolution options for optical localization techniques
Static Laser Stimulation background
3D resolution with MOBIRCH
Application of static laser stimulation to MEMS FA
Case studies using MTLS on FA daily products
Relationship of TLS/SIFT tools

  • Thermography

Introduction

Application of Thermography: some examples
Application of Lock-in Thermography for Defect Localisation at Opened and Fully Packaged Single- and Multi-chip Devices
Application of transient interferometric mapping (TIM) technique for analysis of ns-time scale thermal and carrier dynamics in ESD protection devices
High Resolution Raman Temperature Measurements

  • Dynamic Laser Stimulation

Introduction

Dynamic Laser Stimulation Background
Case studies in DLS at NXP Semiconductors
xVM applied to automotive products
Coupling Test and DLS
DLS using on-chip CPU:Harder, better, faster, stronger?
Application of dynamic laser stimulation for qualification purpose
Picosecond laser stimulation: status, applications & challenges

  • Combined techniques

Introduction

Design analysis in analog signal circuits enhanced by Emission Microscopy and laser based techniques
Failure Diagnosis by Optical Techniques Combined to Layout Localization Software for Wafer Yield Improvement
Multiple FA techniques on advanced technologies
Optical investigation of a resistance-change memory device

 

Electron-Surface Scattering, Electron-Grain Boundary Scattering And Charge Transport In Thin Metallic Films

Raúl C. Muñoz, professeur de physique (Universidad de Chile) est reconnu au niveau international pour ses travaux sur les couches minces métalliques. Que se soit pour les semi-conducteurs des technologies actuelles et futures, les micro ou les
nano systèmes, le comportement électrique de ces couches revêt une importance fondamentale. Les propriétés « classiques » sont elles préservées lorsque l’épaisseur de la couche ne fait plus que quelques nanomètres ? Que se passe t’il lorsque cette couche
présente un forte rugosité ? La conductivité est elle réduite ou améliorée ?
Nous n’avons pas souvent l’occasion d’avoir un exposé avancé sur ces questions et la présence du professeur Raúl C. Muñoz est une opportunité intéressante pour avoir une vision scientifique plus précise sur ces questions.

les présentations (accès privatif):

 

Comprendre les évolutions des technologies Silicium

 

Le but de ce tutorial est de fournir les clés pour comprendre l’évolution des technologies jusqu’au noeud technologie 65nm et de percevoir les enjeux pour les générations futures. Lors de l’analyse de défaillance ou de construction, il s’avère nécessaire de
bien intégrer le process pour pouvoir poser le bon diagnostic. Plus précisément, ce tutorial vous permettra de :

  • Comprendre les clés de l’évolution.
  • Percevoir les enjeux pour les générations futures.
  • Comprendre les nouvelles briques technologiques.
  • Pouvoir décrypter le langage des fondeurs.
  • Percevoir les enjeux pour le Failure Analysis et les mécanismes de défaillance associés.
  • Pouvoir maitriser les risques lors du choix d’une technologie

les présentations (accès privatif):

 

International Symposium On Reliability Of Optoelectronics For Space (ISROS)

The 2009 First International Symposium on Reliability of Optoelectronics For Space (ISROS 2009) and joint thematic day Radiation Effects On Optoelectronics (OPTORAD) were held in Cagliari (Italy) 11-15 May 2009.
The aim of this Symposium was to give the floor to engineers and researchers to address in an informal framework, their work in progress in the fields of qualification, evaluation, reliability assessment and failure analysis on optoelectronic devices for space applications.
Tutorial short courses were offered in conjunction with the Symposium by experts on several fields of optoelectronics.
The Symposium provided a productive and informal environment for a fruitful exchange of ideas. It featured a technical program consisting of several sessions dedicated to :

  • Imagers : APSs, CCDs
  • Emitters : laser diodes, light emitting diodes
  • Photoreceivers : photodiodes, phototransistors, solar cells
  • Optical functions : optical fibres, modulators, optical switches, ...

At the end of the Symposium, the thematic day, OPTORAD (OPTOelectronic devices – RADiation effects), sponsored by the RADECS association, offered invited papers treating on the effects of space radiations on optoelectronic devices.
A round table “OPTOELECTRONIC DEVICES FOR SPACE : NOW AND TOMORROW” was also organized during the conference. The discussions were centred around the following questions :

  • In which application, optoelectronics based solutions may be used instead of other technologies ? Application related to telecommunication or observation satellites, scientific missions, long term extra Earth/Moon or Solar missions will be considered.
  • What are the main optoelectronics devices of interest for these applications?
  • Why did not the space application market use them in a deeper way yet?
  • What could be done at manufacturers, space industries, space agencies, end-users and operators level to push these technologies?

les présentations (accès privatif):

 

Caractérisation Micromécanique de matériaux en couche mince destinés aux micro- et nano- technologies

 

les présentations (accès privatif)

 

Round Table: Network on Chi

 

NoC paradigm has been an active field of research over the last decade. This field of research has grown with the necessity of higher design productivity and its corollary technology scale down (65nm, 45nm, 32nm, 22nm …). How can we maximize IP blocks reuse (plug & play) and how can we overcome some of the cumbersome aspects linked to bus topologies (place & route congestions, timing closure, signal integrity).
Through the various presentations given by Research Institutes and privates companies, the ESA-CNES round table had for objective to identify how existing solutions developed in Europe could potentially be adapted and transposed to the Space sector. What might be the benefit for ESA and CNES to invest in such a technology and what might be the delta efforts needed to mature this technology for Space applications.

les présentations (accès privatif):

Session 1: Introduction

Session 2: Architectures part 1

Session 3: Architectures part 2

Session 4: Tools and design methodologies

Session 5: Fault tolerant NoCs

Session 6: Space applications

Session 7: Conclusion

 

Power Micro-devices Embedded for Mobile Solutions, from energy harvesting to power management & supply

Cet atelier a abordé les différentes solutions de récupération, gestion et stockage d’énergie destinées aux systèmes embarqués, et tout particulièrement aux réseaux de capteurs sans fils

les présentations (accès privatif):

 

 

Round Table: Network on Chi

 

NoC paradigm has been an active field of research over the last decade. This field of research has grown with the necessity of higher design productivity and its corollary technology scale down (65nm, 45nm, 32nm, 22nm …). How can we maximize IP blocks reuse (plug & play) and how can we overcome some of the cumbersome aspects linked to bus topologies (place & route congestions, timing closure, signal integrity).
Through the various presentations given by Research Institutes and privates companies, the ESA-CNES round table had for objective to identify how existing solutions developed in Europe could potentially be adapted and transposed to the Space sector. What might be the benefit for ESA and CNES to invest in such a technology and what might be the delta efforts needed to mature this technology for Space applications.

les présentations (accès privatif):

Session 1: Introduction

Session 2: Architectures part 1

Session 3: Architectures part 2

Session 4: Tools and design methodologies

Session 5: Fault tolerant NoCs

Session 6: Space applications

Session 7: Conclusion

 

 IPDiA : solution d'intégration 3D

Les domaines techniques couverts dans les présentations faites par la société IPDiA sur ses activités sont ceux de l'intégration des passifs (intégration 3D dans le silicium, bénéfices d'une technologie en termes de miniaturisation et de performances applicatives) et la miniaturisation des applications (interposers en silicium avec "TSV" : Through Silicon Via, miniaturisation du packaging avec wafers amincis, technologies d'interconnections fines par bumping, approches SiP sur plateforme à base d'IPD, technologies IPD enterrées: Embedded die).

les présentations (accès privatif):

 

Obsolescence, comment l’éviter ou la gérer?

 

les présentations (accès privatif):

Solutions préventives

Solution curative avant dépassement du Last Buy Order : le stockage stratégique

Solutions curatives après dépassement du Last Buy Order

Retours d’Expérience

 

CMOS detectors for high performance applications

les présentations (accès privatif):

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